Appeal No. 1997-2688
Application No. 08/453,689
DECISION ON APPEAL
This is a decision on the appeal from the final rejection
of claims 1-20 and 50-68, all of the claims pending in the
present application. Claims 21-49 have been canceled.
The claimed invention relates to a contact structure in
an integrated circuit having a semiconductor substrate with a
trench isolation region formed therein which includes a trench
sidewall. Further included is a conductive member which has a
portion electrically coupled to a doped region which abuts the
trench sidewall. Appellants assert at page 2 of the
specification that the particular claimed contact structure
allows high density integrated circuits to be formed with low
contact resistance.
Representative claim 1 is reproduced as follows;
1. A contact structure in an integrated circuit
comprising:
a semiconductor substrate having a major surface;
2
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