Appeal No. 1997-2688
Application No. 08/453,689
a trench isolation region lying within a first portion of
the semiconductor substrate, the trench isolation region
comprising a trench having a trench sidewall;
a first field effect transistor having a source/drain
electrode lying within a second portion of the semiconductor
substrate, the source/drain electrode having a first portion
and a second portion, the first portion having a first depth
and a first width and the second portion having a second depth
and a second width, wherein the first depth is greater than
the second depth and the first width is less than the second
width, and the first portion of the source/drain electrode
abuts the trench sidewall; and
a conductive member overlying the trench isolation
region, the conductive member having a first portion extending
into the trench adjacent to the trench sidewall, wherein the
first portion of the conducticve member is electrically
shorted to the first portion of the source/drain electrode of
the first field effect transistor.
No prior art references have been relied on by the
Examiner.
Claims 1-20 and 50-68 stand finally rejected as being
based on an inadequate disclosure under the written
description requirement of the first paragraph of under 35
U.S.C. § 112.
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