Appeal No. 1997-2691
Application 08/496,849
diode infrared detector with a voltage tunable cutoff
wavelength which is obtained by inserting a SiGe layer between
the metal silicide and the Si substrate. Appellants disclose
on page 5 of the specification that Fig. 1 shows the current
state of the art for metal photoemissive devices which do not
have a SiGe layer between the metal silicide and the Si
substrate. Appellants disclose on page 8 of the specification
that Fig. 3 shows the Appellants' invention having the SiGe
layer between the metal silicide and the Si substrate.
Independent claim 1 presented in the application is
reproducted as follows:
1. A Schottky barrier infrared photovoltaic detector;
which outputs a detection signal which is adjusted by an
externally applied voltage and which comprising:
a silicon substrate having a first and second surface;
a silicide layer placed on the first surface of the
silicon substrate to form a detector which has a barrier
height and which operates in an infrared portion of an
electromagnetic spectrum by internal photoemission of holes
over an electrical barrier, said detector outputting said
detection signal in response to said internal photoemission;
a guard ring implanted in said silicon substrate, said
guard ring surrounding the periphery of said silicide layer to
block surface currents formed on said substrate and to
eliminate edge effects;
2
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