Appeal No. 1997-2691
Application 08/496,849
a SiGe intermediate layer which is grown on the said
first surface of the said silicon substrate before the growth
of the silicide layer, said SiGe intermediate layer producing
an interface with a valance band offset that serves as an
additional barrier to photoemitted carriers to enhance thereby
a voltage tunable cutoff of said electrical barrier in
response to the externally applied voltage; and
first and second contact means for making ohmic contact
with said silicide layer and with said silicon substrate
respectively, said first and second contact means conducing
said externally applied voltage to said detector and
outputting said detection signal.
The references relied on by the Examiner are follows:
Yamaka et al. (Yamaka) 4,939,561 July 3,
1990
Pellegrini 5,163,179 Nov. 10,
1992
Claims 1 through 7 stand rejected under 35 U.S.C. § 103
as being unpatentable over Yamaka and Pellegrini.
Rather than repeat the arguments of the Appellants or the
Examiner, we make reference to the brief and the answer for
the details thereof.
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