Appeal No. 1997-2846
Application 08/388,599
Jpr is the density of current flowing in the second
semiconductor layer 205 right under the third semiconductor
layer 206 when a main current with a magnitude corresponding
to a rated current of the device is passed through the device,
m is a ratio of the predetermined limit current value and the
rated current, and D is the resistivity of the second
pn
semiconductor layer 205 right under the third semiconductor
layer 206. Thus, a bias voltage occurring at a junction
portion between the second semiconductor layer and the third
semiconductor layer does not exceed the built-in potential Vpn
when the main current with the magnitude corresponding to the
rated current is caused to flow in the device and will not
cause conduction of a parasitic transistor.
Independent claim 7 is reproduced as follows:
7. An insulated gate semiconductor device, comprising
a semiconductor base body having an upper main surface
and a lower main surface,
the semiconductor base body comprising,
a first semiconductor layer of a first conductivity type,
a second semiconductor layer of a second conductivity
type provided on the first semiconductor layer, and
3
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