Appeal No. 1997-2846
Application 08/388,599
a third semiconductor layer of the first conductivity
type selectively formed in an upper surface portion of the
second semiconductor layer,
said semiconductor base body having a plurality of
trenches arranged substantially in a stripe form along said
upper main surface and formed from said upper main surface to
said first semiconductor layer,
said trench having a gate insulating film formed covering
its inner wall and a gate electrode buried in said trench with
the gate insulating film interposed therebetween,
said second semiconductor layer and said third
semiconductor layer being selectivity exposed in said upper
main surface interposed between adjacent said trenches,
said insulated gate semiconductor device further
comprising,
a first main electrode electrically connected to both of
said second and third semiconductor layers on said upper main
surface and insulated from said gate electrode,
a second main electrode electrically connected to said
lower main surface, and
overcurrent protection means for limiting the magnitude
of main current flowing between said first main electrode and
said second main electrode so as not to exceed a predetermined
limit current value, and
shape of said third semiconductor layer being set so that
a maximum distance Lmax defined as a distance to a point which
is farthest from an exposure surface of said second
semiconductor layer in said upper main surface among points on
an intersection of a boundary plane of said third
semiconductor layer and said second semiconductor layer and
said trench is given by Vpn > m x Jpr x P x Lmax for built-in
pn
potential Vpn peculiar to a junction
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