Appeal No. 1997-3443
Application No. 08/595,901
The Prior Art
Baker illustrates in Figures 1-6 an array of photovoltaic radiation detector elements 10
formed in a p-type substrate 14 of infrared-sensitive material (cadmium mercury telluride,
HgCdTe) having a crystal lattice structure. Electrically conductive material 23 extends into the
lattice structure. N-type regions 13b are formed by ion etching of the structure so as to form
diodes having p-n junctions 12. Electrical contacts 24 are connected to the p-type substrate 14.
The above array is mounted on a substrate 1 comprising circuit elements for processing signals
derived from the array. Substrate 1 includes conductive elements 2, 3.
Mc Adoo discloses a photodetector. At column 3, lines 30-44, it is disclosed that
tungsten is used for electrically contacting HgCdTe.
Opinion
After consideration of the positions and arguments presented by both the examiner and
the appellants, we have concluded that the rejections should be sustained. We agree in general
with the comments made by the examiner; we add the following discussion for emphasis.
With respect to the rejection of claims 13, 14, 19, 20, 25 and 26 under 35 U.S.C. § 102(b) as
being anticipated by Baker, electrically conductive material 23 extends into the lattice structure
of the substrate 13b, 14 and forms an ohmic contact with the substrate. Material 23 clearly
provides the ohmic contact to connect the n-type side wall regions 13b to conductor elements 2
and 3. See column 10, lines 6-10. Thus, no merit exists in appellant’s position that Baker does
not disclose an electrically conductive material which extends into the lattice structure of the
substrate and forms an ohmic contact with the substrate.
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