Appeal No. 1998-0178
Application No. 08/254,854
The invention pertains to a semiconductor device
having an intermetallic region. More particularly, the
intermetallic region includes a titanium-aluminum compound and
contains no elemental (unreacted) titanium.
Representative claim 24 is reproduced as follows:
24. A semiconductor device comprising:
a substrate;
a patterned first metal layer overlying the substrate,
wherein the patterned first metal layer includes aluminum;
an insulating layer including an opening that overlies
the patterned first metal layer;
a via structure that lies adjacent to the patterned first
metal layer and lies at least partially within the opening,
wherein:
the via structure includes a titanium-aluminum compound;
and
the via structure does not include a layer of elemental
titanium; and
a patterned second metal layer overlying the via
structure.
The examiner relies on the following reference:
Fujii et al. (Fujii) 5,312,775 May. 17, 1994
(effective filing date Jan. 21, 1992)
Claims 24 and 26-30 stand rejected under 35 U.S.C. §
112, second paragraph, for failing to particularly point out
and distinctly claim the invention. Claims 24 and 26-30 also
stand rejected under 35 U.S.C. § 102(a) as being anticipated
by the disclosure of Fujii.
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