Ex parte TAKEUCHI - Page 2




          Appeal No. 1998-0915                                                        
          Application No. 08/441,194                                                  


          elimination of effects caused by subgrain boundaries within                 
          piezoelectric resistors formed of recrystallized silicon film.              
          Representative claim 1 is reproduced as follows:                            
               1.  A semiconductor pressure detecting device including a              
          silicon chip having first portions, a central portion between,              
          connected to, and thinner than said first portions, said                    
          central portion of said silicon chip including a surface and                
          at least one gauge resistance on the surface, said gauge                    
          resistance comprising a piezoresistance element including a                 
          laser recrystallized silicon film, said recrystallized silicon              
          film including a connecting portion having edges, and two                   
          contacts electrically connected to each other by said                       
          connecting portion, said connecting portion of said                         
          recrystallized silicon film including at least one subgrain                 
          boundary transverse to and intersecting said edges, wherein                 
          the surface is a (100) or equivalent surface and said                       
          recrystallized silicon film is P-type and is arranged along a               
          (110) direction of said silicon chip, and including                         
          respective, spaced apart metallizations disposed on                         
          corresponding subgrain boundaries of said recrystallized                    
          silicon film, whereby each of the subgrain boundaries in said               
          connecting portion of said recrystallized silicon film between              
          said contacts is short-circuited by a respective                            
          metallization.                                                              
          The examiner relies on the following references:                            
          Seidel et al. (Seidel)        3,965,453          June 22, 1976              
          Ipposhi et al. (Ipposhi)      5,471,086          Nov. 28, 1995              
          (filed Oct. 31,                                                             
          1992)                                                                       
          Claims 1 and 2 stand rejected under 35 U.S.C.  103.  As                    
          evidence of obviousness the examiner offers Ipposhi alone with              



                                          2                                           





Page:  Previous  1  2  3  4  5  6  7  8  9  Next 

Last modified: November 3, 2007