Appeal No. 1998-0915
Application No. 08/441,194
elimination of effects caused by subgrain boundaries within
piezoelectric resistors formed of recrystallized silicon film.
Representative claim 1 is reproduced as follows:
1. A semiconductor pressure detecting device including a
silicon chip having first portions, a central portion between,
connected to, and thinner than said first portions, said
central portion of said silicon chip including a surface and
at least one gauge resistance on the surface, said gauge
resistance comprising a piezoresistance element including a
laser recrystallized silicon film, said recrystallized silicon
film including a connecting portion having edges, and two
contacts electrically connected to each other by said
connecting portion, said connecting portion of said
recrystallized silicon film including at least one subgrain
boundary transverse to and intersecting said edges, wherein
the surface is a (100) or equivalent surface and said
recrystallized silicon film is P-type and is arranged along a
(110) direction of said silicon chip, and including
respective, spaced apart metallizations disposed on
corresponding subgrain boundaries of said recrystallized
silicon film, whereby each of the subgrain boundaries in said
connecting portion of said recrystallized silicon film between
said contacts is short-circuited by a respective
metallization.
The examiner relies on the following references:
Seidel et al. (Seidel) 3,965,453 June 22, 1976
Ipposhi et al. (Ipposhi) 5,471,086 Nov. 28, 1995
(filed Oct. 31,
1992)
Claims 1 and 2 stand rejected under 35 U.S.C. § 103. As
evidence of obviousness the examiner offers Ipposhi alone with
2
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