Appeal No. 1998-1657 Page 11
Application No. 08/674,282
Young shows all the limitations of the claimed
sense amplifier arrangement in figs.l-4, comprising
a sense amplifier latch circuit 21a-24b and a local
column read amplifier 28,25,27,YDR,S, S, in each
sense amplifier circuit, except the use of first and
second local sense amplifier drive transistors, as
recited in claims 5,25,33 and 35.
However, EP (`880) shows a plurality of sense
amplifier 57 each comprising a latch circuit 51-56
and first and second local sense amplifier drive
transistors 58 and 61 in figs 1-13.
(Final Rejection at 3.) The appellants argue, "21a-24b of
Young form a memory cell latch and not a sense amplifier
latch, and 25, 27, 28 form a column sense amplifier and not a
sense amplifier latch." (Reply Br. at 5.) They further
argue, "25, 27, 28 is a column sense amplifier, not a read
amplifier." (Id. at 11.)
Claim 5-7 and 20-24 specify in pertinent part the
following limitations:
a plurality of column read amplifiers
corresponding to said plurality of sense amplifiers;
and
a plurality of data read lines;
each said column read amplifier being
responsively coupled to at least one of said
internal nodes of the latch circuit of the
corresponding sense amplifier, each said column read
amplifier being coupled to at least one said data
read line.
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