Appeal No. 1998-1815 Page 11
Application No. 08/684,328
25, 27 . . . ." (Final Rejection at 2.) His rejection
continues as follows.
Young is applied as stated above.
What is not shown in Young is the use of at
least one local sense amplifier drive transistor, as
recited in claims 45-46.
However, EP ('880) clearly shows the use of at
least one local sense amplifier drive transistor 58
and 61 in figs. 1-13.
In regard to claims 45-46, therefore, to utilize
the use [sic] of at least one local sense amplifier
drive transistor from the teachings of EP ('880)
into Young would have been obvious to one ordinarily
skilled in the art to provide the claimed method of
reading data because the advantage of the use of at
least one local sense amplifier drive transistor is
in detail discussed in EP ('880).
(Id. at 4.) The appellant argues, "28,25,27 etc. are not a
read amplifier but a column sense amplifier. Likewise, 21a-
24b are not a sense amplifier latch but form a memory cell
latch." (Appeal Br. at 40.)
Claims 45 and 46 specify in pertinent part the following
limitations:
operating a sense amplifier latch to develop a
first voltage on a first internal latch node
communicating with said bit line, said first voltage
corresponding to the data on said bit line;
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