Appeal No. 1998-1993
Application 08/320,729
shown in Morozumi’s Figure 10 is about 0.05x10 amperes-9
corresponding to a channel thickness of about 1250 D.
Morozumi discloses that thin film transistors having leakage
currents of 100 picoamperes (0.1x10 amperes) or less were-9
possible [column 11, lines 46-48]. Thus, the examiner found
that Morozumi suggested low leakage liquid crystal devices in
which the transistors had a channel thickness of about 1250 D
and a leakage current of about 5x10 amperes. The examiner-11
cites Asars as teaching a low leakage liquid crystal device.
Asars discloses that such a device has a leakage resistance
equal to or greater than 10 ohms [column 5, lines 12-13].10
Based on the teachings of Morozumi and Asars, the examiner
finds that the low leakage liquid crystal device of Morozumi
should have a leakage resistance of 10 ohms or more as taught10
by Asars. The examiner notes that the low leakage liquid
crystal devices of Morozumi and Asars disclose nothing about
the size of such devices. The examiner notes that in making
the low leakage liquid crystal device of Morozumi and Asars,
the artisan would begin by considering liquid crystal cells
which had a size that was typical at the time of Morozumi and
10
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