Ex parte MANO et al. - Page 14




          Appeal No. 1998-1993                                                        
          Application 08/320,729                                                      


          operate at substantially different voltage levels.                          
               Morozumi, like the claimed invention, has a channel                    
          region comprised of a thin film of silicon [column 2, lines 1-              
          8].  The channel region in Asars is comprised of cadmium                    
          selenide [column 3, lines 28-30].  Togashi discloses                        
          transistors having a channel region comprised of a thin film                
          of cadmium selenide or an amorphous form of silicon.                        
          Therefore, once again, the alleged conventional properties of               
          these devices relate to devices which are not all formed of                 
          the same material.                                                          
          When the differences between the liquid crystal devices                     
          of Morozumi, Asars and Togashi are considered, we are                       
          constrained to find that these three references are not                     
          directed to the same liquid crystal device.  Therefore, what                
          the examiner finds as conventional in one of these references               
          does not make it conventional when modified to meet the                     
          different operating characteristics of the other liquid                     
          crystal devices.  Since the liquid crystal devices of these                 
          three references are not the same, the “conventional”                       
          teachings of one reference cannot simply be substituted into                


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