Appeal No. 1998-1993
Application 08/320,729
operate at substantially different voltage levels.
Morozumi, like the claimed invention, has a channel
region comprised of a thin film of silicon [column 2, lines 1-
8]. The channel region in Asars is comprised of cadmium
selenide [column 3, lines 28-30]. Togashi discloses
transistors having a channel region comprised of a thin film
of cadmium selenide or an amorphous form of silicon.
Therefore, once again, the alleged conventional properties of
these devices relate to devices which are not all formed of
the same material.
When the differences between the liquid crystal devices
of Morozumi, Asars and Togashi are considered, we are
constrained to find that these three references are not
directed to the same liquid crystal device. Therefore, what
the examiner finds as conventional in one of these references
does not make it conventional when modified to meet the
different operating characteristics of the other liquid
crystal devices. Since the liquid crystal devices of these
three references are not the same, the “conventional”
teachings of one reference cannot simply be substituted into
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