Appeal No. 1996-0478
Application No. 08/171,769
BACKGROUND
The appellant's invention relates to an insulated gate field effect transistor and its
manufacturing method. The method includes the step of forming a gate insulating layer
on a semiconductor layer and irradiating and doping the semiconductor layer through
an opening in the gate insulating layer. An understanding of the invention can be
derived from a reading of exemplary claim 20, which is reproduced below.
20. A method of forming a semiconductor device comprising the steps of:
forming a non-single crystalline semiconductor layer containing a recombination
center neutralizer on an insulating surface of a substrate;
forming a gate electrode on said semiconductor layer with a gate insulating layer
therebetween;
doping portions of said semiconductor layer with an impurity to form source and
drain regions; and
exposing said portions to light irradiation in order to crystallize said portions or
activate dopant impurities contained therein;
wherein said gate insulating layer extends beyond an edge of said gate electrode
and covers said portions of the semiconductor layer, and the doping of said portions
and the exposure of said portions to light irradiation are carried out through a part of
said gate insulating layer located on said portions.
The reference of record relied upon by the examiner in rejecting the appealed
claims is:
Yamazaki 4,727,044 Feb. 23, 1988
(Filed May 20, 1985)
2
Page: Previous 1 2 3 4 5 6 7 8 9 10 Next
Last modified: November 3, 2007