Appeal No. 1997-3312
Application No. 08/183,787
the space between the upper and lower electrodes, the magnets
are capable of generating a magnetic field which extends in a
substantially horizontal direction through the space between
the electrodes. Respecting this feature of the claimed
magnetron plasma process apparatus, appealed Claim 9 calls for
a "magnetic field generating means having at least two
permanent magnets located outside said process chamber, two of
said permanent magnets being oppositely positioned so as to
sandwich the space between said electrodes, for generating a
horizontal magnetic field which extends through the space
between said electrodes, from one of said magnets to the other
thereof and substantially parallel to said electrodes." This
feature of the claimed apparatus permits the apparatus to
efficiently process an entire surface of a semiconductor wafer
on the lower electrode while not being adversely influenced by
a vertical component of the magnetic field. Further, as
illustrated in Figure 5 of the application, the claimed
apparatus also includes a mechanism for raising and lowering
the lower electrode. This feature of the claimed invention is
set forth in appealed Claim 9 as a "drive means for moving
said first electrode in a vertical direction between a process
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