Appeal No. 1998-1154
Application No. 08/304,960
APPENDIX
1. A method of ion implantation, comprising the steps of:
placing a substrate metal selected from the group
consisting of aluminum and aluminum-based alloys in an ion
implantation vacuum chamber;
introducing oxygen molecules into the ion implantation
vacuum chamber to a pressure in the range of 1 x 10-5 torr to
10 x 10-5 torr; and
directing a beam of ions at the substrate metal, said ion
being selected from the group consisting of tantalum ions,
titanium ions, zirconium ions, tungsten ions, molybdenum ions,
and silicon ions.
1
Page: Previous 1 2 3 4 5 6 7 8 9 10 11
Last modified: November 3, 2007