Appeal No. 1998-2329
Application No. 08/740,402
finds that Tabuchi does not disclose the stress effects of the
oxide and nitride or depositing the oxynitride by PECVD
processing (Answer, page 10).2
To remedy this deficiency of either Bohlen or Tabuchi, the
examiner applies Leedy for the teaching that a hard mask made of
silicon dioxide and silicon nitride forms an oxynitride which
together lower tensile stress levels (Answer, pages 5-6). The
examiner states that “[t]he purpose of the Leedy reference is to
demonstrate the combination of silicon nitride and silicon
dioxide to make an oxynitride and that oxynitrides provide
reduced stress.” Answer, page 14. However, the examiner has
not provided any factual basis in Leedy to support the above
noted findings. Leedy discloses that silicon oxide and silicon
nitride dielectric films are used as free standing membranes
(col. 6, ll. 27-34) and that deposition of these low stress
dielectric films on either side of the semiconductor layer will
2The examiner finds that Tabuchi discloses a masking film
comprising at least one layer from various selected metals,
metal oxides, and metal nitrides (see col. 2, ll. 29-33; col.
3, ll. 38-42). However, the examiner presents no convincing
evidence or reasoning that two or more of these materials in a
film would form an oxynitride mask film with stress values
within the ranges recited in claim 1 on appeal.
5
Page: Previous 1 2 3 4 5 6 7 8 9 10 11 Next
Last modified: November 3, 2007