Appeal No. 1998-2329
Application No. 08/740,402
1. A method of forming a hard mask for use in the
formation of a refractory radiation mask comprising the steps
of:
providing a membrane structure including a step of forming
a radiation absorbing layer to be patterned as a portion of the
membrane structure;
forming a hard mask layer on a surface of the radiation
absorbing layer of the membrane structure, the hard mask layer
including a material system creating an average stress in the
membrane structure of less than 1E08 dynes/cm and a range of2
2 2
stresses from + 1.5E08 dynes/cm to-1.5E08 dynes/cm and
therefore reduced distortion of the membrane structure; and
patterning the hard mask layer.
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