Appeal No. 1998-2643
Application 08/549,349
APPENDIX
32. A method of forming a multilayer coating on
a semiconductor integrated circuit device comprising
the steps of:
preparing first particles of a first coating
composition;
applying the first particles to a flame stream
which is at a temperature sufficient to place the
first particles in a molten state;
building a specific thickness first layer of
said first coating composition by passing the flame
stream across the integrated circuit in successive
passes over the integrated circuit;
preparing second particles of a second coating
composition;
applying the second particles to a flame stream
which is at a temperature sufficient to place the
second particles in a molten state;
building a specific thickness of a said second
coating composition on said first layer by passing
the flame stream across the integrated circuit in
successive passes over the integrated circuit; and
selecting the size of said first and second
particles so that the particles attain a molten
state in the flame stream and produce an impact
force less than a specific level when striking the
circuit in a molten state.
34. The method of claim 32 wherein one of said
first and second coating compositions comprises a
material that attenuates energy above the visible
spectrum and said one coating has a thickness on the
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