Appeal No. 1998-2649
Application No. 08/616,990
disposed between these supports, and a target support
positioned between the vertical side surface of the chamber
and the coil. This appealed subject matter is adequately
illustrated by independent claim 1 which reads as follows:
1. A plasma sputtering apparatus comprising:
a chamber having an upper end, a lower end, and a
vertical side surface connecting the upper and lower
ends;
a first wafer support located at the lower end of
the chamber;
a second wafer support located at the upper end of
the chamber;
a coil of conductive material disposed between the
first and second wafer supports;
a target support positioned between the vertical
side surface and the coil;
means for applying radio frequency energy to the
coil; and
means for applying a radio frequency or direct
current bias to each wafer support.
The references set forth below are relied upon by the
examiner as evidence of obviousness:
Barnes et al. (Barnes) 5,178,739 Jan. 12,
1993
Mosely et al. (Mosely) 5,431,799 Jul. 11,
1995
Canon Co., Ltd. (Canon) 64-055379 Mar. 02,
1989
(published Japanese Patent Application)
2
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