Appeal No. 1998-1216
Application 08/356,194
deposition and without exposing the first film to air
successively forming a second film by chemical vapor
deposition on the first film,
wherein the second film is a metal oxynitride and the metal of
this compound constitutes the metal used to form the first
film. Further details of this appealed subject matter are set
forth in representative independent claim 8, which reads as
follows:
8. A method of manufacturing a semiconductor device
comprising the steps of providing a semiconductor substrate
having a patterned insulating layer formed on a surface
thereof, the insulating layer being patterned to form at least
one contact hole defining side walls of said insulating layer
and an exposed portion of the surface of said semiconductor
substrate; forming a first film by a first chemical vapor
deposition to cover the patterned insulating layer, the side
walls and the exposed portion, the first film being a pure
metal selected from a group consisting of titanium, tungsten,
molybdenum, hafnium, and zirconium; without exposing the first
film to air, successively forming a second film by a second
chemical vapor deposition on the first film, said second film
being a metal oxynitride and the metal of the compound being
the metal used to form the first film; and then forming a
tungsten film on the second film to fill each contact hole
with the tungsten film, said first and second chemical vapor
depositions being performed using a gas consisting of a
halogen and said metal.
2
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