Appeal No. 1999-1517
Application No. 08/837,523
forming an undoped polysilicon gate on the gate
insulator;
forming an insulating layer over the gate and the
device region;
forming a polysilicon diffusion source layer over
the insulating layer, wherein the diffusion
source layer is heavily doped with a dopant
of a second conductivity type;
applying a thermal cycle to drive the dopant from
the diffusion source layer through the
insulating layer into the gate and the
device region by solid phase diffusion
without driving essentially any of the
dopant through the gate into the device
region, and without driving essentially any
dopant of the first conductiv-ity type
through the insulating layer, thereby
heavily doping the gate the second
conductivity type and forming a heavily
doped source and drain of the second
conductivity type in the device region; and
removing the diffusion source layer.
The examiner relies on the following references.
Byun et al. (Byun) 5,599,734 Feb. 04, 1997
(Filed Jun. 06, 1995)
Ehinger et al. (Ehinger) EP 520,214 Dec. 30, 1992
Claims 11 through 30 stand rejected under 35 U.S.C. §
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