Appeal No. 1999-1517
Application No. 08/837,523
extent during the diffusion to form the source and drain
region . . ., but [as to the other specifics] there is nothing
in the claim that specifies to what extent the gate electrode
needs to be doped, only that it is doped to some extent.”
(Emphasis in original.) We agree with the examiner’s position
that, in Figure
2b of the Byun reference, layer 24 is the doped diffusion
layer and covers substrate 21 as well as gate electrode 23.
In the next step, when the thermal process occurs, the
diffusion of the doping material takes place as to substrate
21 and also with respect to gate electrode 23. The resulting
structure shown in Figure 2C of Byun has source/drain at 25
and an electrode 23 with dopant in it. There is no indication
in the reference which shows that such a diffusion of the
dopant will be prevented from occurring as to gate 23.
As to the Ehinger reference, appellants argue (brief at
page 8) that “[n]o indication is given in the Ehinger
reference, that a diffusion of doping ions occurs into the
adjacent (base) terminal (251 in Fig. 4 and 55 in Fig. 7 of
the Ehinger reference).” However, we agree with the
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