Appeal No. 2000-0751
Application No. 08/903,549
and negative supply voltages. The device includes a first group
of integrated MOS transistors formed on the die. The first group
of transistors has gate oxides. A second group of integrated MOS
transistors is formed on the die and the second group also has
gate oxides. The gate oxides of the second group of transistors
are thicker than the gate oxides of the first group of
transistors. A path is provided to communicate boosted positive
and negative supply voltages, greater than the positive and
negative supply voltages, to at least some of the second group of
transistors.
Representative independent claim 11 is reproduced as
follows:
11. An integrated circuit device comprising:
a first transistor having a gate electrode and a gate oxide;
and
a second transistor having gate electrode and a gate oxide,
said gate oxide of said second transistor being thicker than said
gate oxide of said first transistor, said second transistor gate
electrode adapted to be selectively connected to a positive or a
negative bias voltage.
The examiner relies on the following references:
Crouse 4,628,307 Dec. 9, 1986
Yoh 4,954,730 Sep. 4, 1990
Yee 5,818,087 Oct. 6, 1998
-2–
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