Appeal No. 2000-0751
Application No. 08/903,549
However, in the instant case, the examiner has made no
showing that the cited references disclose a transfer gate, as
claimed, wherein a gate electrode may be “adapted to be
selectively connected to a negative potential” and wherein a
transfer gate may be “adapted to be selectively connected to a
positive voltage boosted above said supply voltage,” as claimed.
The portions of Yoh and Crouse cited by the examiner provide no
indication of these claimed capabilities and the examiner has not
explained how these portions may be interpreted as disclosing the
claimed limitations. Accordingly, we will not sustain the
rejection of claims 27 and 30 under 35 U.S.C. 102(b).
With regard to the rejection of claims 1-10 and 12-26 under
35 U.S.C. 103, the examiner states, with regard to independent
claim 1, that Yee discloses all of the claimed subject matter but
for a path system for communicating the recited boosted voltages
to the second transistors but contends that this would have been
obvious “since it is old and well-known in the art that when gate
oxide layers are made thicker, a higher bias voltage applied to
the gate of the transistor will be needed due to the higher Vt of
the transistor caused by the thicker gate oxide layer, of which
fact official notice is taken” [answer-page 5].
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