Appeal No. 2000-1848
Application No. 08/810,920
sequentially forming a layer to be etched and first
photoresist layer on a semiconductor substrate;
sequentially forming an intermediate barrier layer
and second photoresist layer on the first photoresist layer;
patterning the second photoresist layer, and etching
the intermediate barrier layer using the second photoresist
layer patterned as a mask; and
etching the first photoresist layer with a helicon-
type etching apparatus, using only nitrogen gas, using the
patterned intermediate barrier layer as a mask.
The examiner relies upon the following references as
evidence of obviousness:
Higashikawa et al. 4,473,437 Sep. 25, 1984
(Higashikawa)
Katz et al. 5,508,144 Apr. 16, 1996
(Katz)
Appellants' claimed invention is directed to a method of
patterning, via etching, a first photoresist layer through a
patterned intermediate barrier layer. The barrier layer is
patterned by use of a second photoresist layer. Claim 1
recites that the first photoresist layer is etched using only
nitrogen gas with a helicon-type apparatus, whereas claim 11
specifies that the first photoresist layer is patterned by
reactive ion etching in a nitrogen gas atmosphere.
-2-
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