Appeal No. 2001-2184
Application 09/005,364
OPINION
We reverse the aforementioned rejection. We need to address
only claim 17, which is the sole independent claim.
Nakashiba discloses a chemical mechanical polishing method
for planarizing a first surface of a semiconductor wafer by
holding the wafer over a chemical mechanical polishing pad,
applying directly over a second surface of the wafer a non-
uniform pressure distribution comprising a plurality of different
simultaneously applied positive pressures, and polishing the
first surface of the wafer by pressing it against the chemical
mechanical polishing pad while the non-uniform pressure
distribution is applied directly over the second surface of the
wafer (col. 4, line 37 - col. 5, line 34). Nakashiba does not
disclose applying over the second surface of the wafer,
simultaneously with the plurality of different positive
pressures, at least one negative pressure.
Tanaka discloses a method for chemical mechanical polishing
a semiconductor wafer by holding a second surface of the wafer by
vacuum suction while a first surface of the wafer is polished by
rotating it against a polishing pad (col. 5, lines 26-36;
figure 1). Gelation suppression members, which introduce water
into the system, are used to suppress gelation of the abrasive
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