Appeal No. 1999-1939
Application No. 08/862,449
1. An integrated circuit including a DRAM, said
DRAM comprising:
a memory array including a plurality of pass gate
transistors and a plurality of memory elements;
said pass gate transistors each having a gate
material selected to provide a substantially near mid-gap
work function or greater; and
a peripheral area including a plurality of logic
transistors.
25. An integrated circuit including a DRAM device,
said DRAM comprising:
a memory array including a plurality of pass gate
transistors and a plurality of memory elements;
said pass gate transistors comprising n-channel
devices having P+ doped polysilicon gate regions; and
a peripheral area including a plurality of logic
transistors.
The references relied on by the examiner are:
Klein et al. (Klein) 3,673,471 Jun. 27,
1972
Noguchi 4,841,346 Jun. 20,
1989
Azuma et al. (Azuma) 4,888,631 Dec. 19,
1989
Lee 5,164,805 Nov. 17,
1992
Shino 5,256,894 Oct. 26,
1993
Misawa et al. (Misawa) 5,714,771 Feb. 3,
1998
(effective filing date May 15,
1989)
2
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