Ex Parte SUGIYAMA et al - Page 4



              Appeal No. 1999-2580                                                                Page 4                
              Application No. 08/753,598                                                                                
              the island were in its freely grown, relaxed, or stress-free, state.  Because the thickness               
              of the island is equal to the number of atomic layers in the island multiplied by the                     
              lattice constant, the height of the dot in its constrained state surrounded by the GaAs                   
              layer is less than the height of the dot in its freely grown or unconstrained state”                      
              [answer-pages 7-8].  The examiner further explains that the instant claims are drawn to                   
              the situation where the spacer layer has substantially the same thickness as the islands                  
              and this is the same situation taught by Solomon near the bottom of the first column at                   
              page 955 since Solomon’s GaAs spacer layer thickness of 40 angstroms is the same                          
              as the island thickness.                                                                                  
                     Specifically with regard to instant claim 1, the examiner employs the general                      
              reasoning, as above, and further states, at page 10 of the answer:                                        
                     Because the InAs dots within the GaAs layer are compressed as                                      
                     compared to the “freely grown state,” the height of the InAs dots in the                           
                     “freely grown state” will inherently be larger than 40 angstroms.                                  
                     (Compressed dots are inherently less thick than uncompressed dots.)                                
                     Each quantum dot in a GaAs layer is aligned with another dot in an                                 
                     adjacent GaAs layer either above or below.  Each of the GaAs layers is 40                          
                     angstroms thick, which is less that [sic, than] the Bohr-radius of 120                             
                     angstroms (specification, page 16, line 24).  Claim 1 is thus anticipated by                       
                     Solomon et al.  Alternatively, it would have been obvious...to make both                           
                     the InAs dots and the GaAs spacer layer of the Solomon structure of                                
                     substantially identical height, in order to increase the coupling between                          
                     InAs dots in adjacent layers as desired by Solomon et al.   As noted                               
                     above, Xie et al. is relied upon generally for discussion of SK growth, and                        
                     more specifically for the micrograph of figure 2.                                                  
                     For their part, appellants contend that there is no teaching or suggestion in                      
              Solomon that the intermediate layers have a thickness smaller than a height of the                        
              quantum dots in a freely grown state, as claimed.  Appellants urge that Solomon                           
              “merely changes the thickness of the intermediate layer that is grown over the                            






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