Appeal No. 2001-0430
Application No. 08/697,699
source material using a single first radio frequency (RF) power, and the second conformal dielectric
layer is formed through a second PECVD of a second source material using a second RF power.
Claim 1 is the only independent claim on appeal, and it reads as follows:
1. A method for forming for use within an integrated circuit a gap filling sandwich
composite dielectric layer construction comprising:
providing a substrate;
forming upon the substrate a patterned layer;
forming upon the patterned layer a single layer first conformal dielectric layer, the
single layer first conformal dielectric layer being formed through a first plasma enhanced chemical
vapor deposition (PECVD) method employing a first source material, the first plasma enhanced
chemical vapor deposition (PECVD) method also employing a single first radio frequency power
optimized primarily to limit plasma induced damage to the substrate and the patterned layer, the
single first radio frequency power also being optimized secondarily to limit moisture permeation
through the single layer first conformal dielectric layer;
forming upon the single layer first conformal dielectric layer a gap filling dielectric layer;
and
forming upon the gap filling dielectric layer a second conformal dielectric layer, the second
conformal dielectric layer being formed through a second plasma enhanced chemical vapor
deposition (PECVD) method employing a second source material, the second plasma enhanced
chemical vapor deposition (PECVD) method also employing a second radio frequency power
optimized primarily to limit moisture permeation through the second conformal dielectric layer.
2
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Last modified: November 3, 2007