Appeal No. 2001-0430
Application No. 08/697,699
Ngo discloses that a conventional wattage of 1000 watts or a reduced wattage of 500 watts
may be used in a PECVD process for forming silicon dioxide (Abstract; column 1, lines 24 through
28; column 3, lines 7 through 26).
In view of the teachings of Dawson, Machida, Jain and Ngo, the obviousness rejection of
claims 1, 2, 4 through 6, 8 through 10 and 24 based upon the combined teachings of these references
is reversed because we agree with appellants’ argument (brief, page 19) that neither of these
references provides “ a disclosure of optimizing a radio frequency power . . . when forming a
conformal dielectric layer within a gap filling sandwich composite dielectric layer construction.”
With respect to the obviousness rejections of claims 1, 2, 4 through 6, 8 through 10 and 24
based upon the combined teachings of Dawson, Kocmanek and Cain, and either Machida or Jain or
alternatively the same combination of teachings with the additional teachings of Ngo, the above-
noted shortcomings in the teachings of these references negate any suggestion or motivation for
combining the teachings and suggestions of the references. Accordingly, the obviousness rejections
of these claims are reversed.
DECISION
The decision of the examiner rejecting claims 1, 2, 4 through 6, 8 through 10 and 24 under
35 U.S.C. § 103(a) is reversed.
REVERSED
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