Appeal No. 2001-0555
Application No. 09/026,093
Specifically, appellants’ claimed MOSFET comprises a drain region
and a source region adjacent to a channel region; a thin gate
oxide situated on the channel region, said thin gate oxide having
a thickness of less than 5 nm; a gate conductor having a gate
length of less than 0.1 µm situated on the gate oxide, said gate
conductor having vertical side walls and the junctions between
the source region and the channel region, and the drain region
and the channel region and the drain region, the channel region
being abrupt.
The following claim 1 further illustrates the invention.
1. A metal oxide semiconductor field effect transistor
(MOSFET) comprising:
a drain region and a source region adjacent to a channel
region;
a thin gate oxide situated on the channel region, said
thin gate oxide having a thickness of less than 5 nm;
a gate conductor having a length of less than 0.1 µm
situated on the gate oxide, said gate conductor having vertical
side walls and the junctions between the source region and the
channel region and the drain region and the channel region being
abrupt.
The Examiner relies on the following references:
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