Ex Parte MIKAN - Page 3




          Appeal No. 2001-1189                                                        
          Application No. 08/824,140                                                  


               Reference is made to the briefs (paper numbers 18 and 22)              
          and the answer (paper number 21) for the respective positions of            
          the appellant and the examiner.                                             
                                       OPINION                                        
               We have carefully considered the entire record before us,              
          and we will reverse the obviousness rejection of claims 1, 2,               
          4 through 10, 12 through 18 and 20 through 27.                              
               According to the examiner (answer, pages 3 and 4), Lyon                
          discloses (prior art Figure 1a) “a dynamic logic circuit operable           
          for reset during a precharge clock phase (when CLK is low) and to           
          evaluate during an evaluate clock phase (when CLK is high),                 
          comprising: a first NFET (13a) coupled in series between a first            
          node and a first reference voltage (ground) wherein gate                    
          electrode of the first NFET is operable for receiving a data                
          input (InA); a third NFET (12) coupled between the NFET and a               
          reference voltage (ground) and receiving a clock signal (CLK).”             
          The examiner acknowledges (answer, page 4) that “Lyon’s prior art           
          figure 1 does not teach the claimed second NFET and first                   
          PFET . . . . ”  The examiner additionally states (answer, page 4)           
          that:                                                                       
                    In figure 4, D’Souza shows a standard MOS logic                   
               structure wherein the typical parallel pull-down N-                    
               channel MOSFETs are replaced by 2 NFETs and 1 PFET                     

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