Appeal No. 2001-1697 Page 2 Application No. 09/059,718 An understanding of the invention can be derived from a reading of exemplary claim 41, which is reproduced below. 41. A process for forming a dielectric film containing silicon dioxide and silicon nitride on an exposed surface of a layer containing silicon, said process comprising the steps of: providing a chamber; determining the desired thickness of a layer of said dielectric film containing silicon dioxide and silicon nitride on said exposed surface of said layer containing silicon; heating said exposed surface of said layer containing silicon to a temperature in the range of at least 600°C and to 1100°C; providing a gaseous mixture including nitrous oxide exhibiting a partial pressure, ozone exhibiting a partial pressure, at least one compound containing a halogen selected from the group consisting of Cl2, Br2, HC1 and HBr, and steam, the partial pressure of the ozone being at least one tenth the partial pressure of the nitros oxide in the gaeous mixture, the gaseous mixture being substantially free of fluorine-containing gases; and subjecting said exposed surface of a layer containing silicon to the gaseous mixture including at least nitrous oxide, ozone, at least one compound containing a halogen selected from the group consisting of Cl2, Br2, HC1 and HBr, and steam for a period sufficient to form the dielectric film to the desired thickness. The prior art references of record relied upon by the examiner in rejecting the appealed claims are: Fujishiro et al. (Fujishiro) 5,294,571 Mar. 15, 1994 Yamasaki et al. (Yamasaki)1 8-78693 Mar. 22, 1996 1 The examiner refers to this reference as JP ‘693 and lists the first named inventor’s surname as “Yamazaki,” which spelling corresponds to the spelling of the first named inventor’s surnamePage: Previous 1 2 3 4 5 6 7 8 9 10 NextLast modified: November 3, 2007