Ex Parte SANDHU et al - Page 2




          Appeal No. 2001-1697                                       Page 2           
          Application No. 09/059,718                                                  


          An understanding of the invention can be derived from a reading             
          of exemplary claim 41, which is reproduced below.                           
                    41.  A process for forming a dielectric film containing           
               silicon dioxide and silicon nitride on an exposed surface of           
               a layer containing silicon, said process comprising the                
               steps of:                                                              
                    providing a chamber;                                              
                    determining the desired thickness of a layer of said              
               dielectric film containing silicon dioxide and silicon                 
               nitride on said exposed surface of said layer containing               
               silicon;                                                               
                    heating said exposed surface of said layer containing             
               silicon to a temperature in the range of at least 600°C and            
               to 1100°C;                                                             
                    providing a gaseous mixture including nitrous oxide               
               exhibiting a partial pressure, ozone exhibiting a partial              
               pressure, at least one compound containing a halogen                   
               selected from the group consisting of Cl2, Br2, HC1 and HBr,           
               and steam, the partial pressure of the ozone being at least            
               one tenth the partial pressure of the nitros oxide in the              
               gaeous mixture, the gaseous mixture being substantially free           
               of fluorine-containing gases; and                                      
                    subjecting said exposed surface of a layer containing             
               silicon to the gaseous mixture including at least nitrous              
               oxide, ozone, at least one compound containing a halogen               
               selected from the group consisting of Cl2, Br2, HC1 and HBr,           
               and steam for a period sufficient to form the dielectric               
               film to the desired thickness.                                         
               The prior art references of record relied upon by the                  
          examiner in rejecting the appealed claims are:                              
          Fujishiro et al. (Fujishiro)       5,294,571      Mar. 15, 1994             
          Yamasaki et al. (Yamasaki)1        8-78693        Mar. 22, 1996             


               1 The examiner refers to this reference as JP ‘693 and lists           
          the first named inventor’s surname as “Yamazaki,” which spelling            
          corresponds to the spelling of the first named inventor’s surname           







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