Appeal No. 2001-2085
Application No. 09/104,409
Independent claim 13 is reproduced as follows:
13. A method for monitoring temperature in a thermal processing
system, comprising the steps of:
depositing a cobalt film on a semiconductor substrate;
measuring a resistance characteristic of the cobalt film prior to
generating a cobalt silicide;
performing thermal processing on the substrate, thereby generating
the cobalt silicide film;
measuring a resistance characteristic of the cobalt silicide; and
determining a temperature of the thermal processing using the
resistance characteristic of the cobalt film and the cobalt silicide film,
respectively.
The examiner relies on the following references:
Powell et al. (Powell) 4,764,026 Aug. 16, 1988
Yoder 5,225,366 Jul. 06, 1993
Fiory 5,624,590 Apr. 29, 1997
Wolf, “Silicon Processing for the VLSI Era, Vol. 2: Process Integration”, pp. 150-152 ,
Lattice Press (1990).
Claims 13, 16 and 17 stand rejected under 35 U.S.C. § 103. As evidence of
obviousness, the examiner cites Fiory, Wolf and Powell with regard to claims 13 and
16, adding Yoder to this combination with regard to claim 17.
Reference is made to the briefs and answer for the respective positions of
appellant and the examiner.
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