Appeal No. 2001-2146
Application No. 09/270,588
THE INVENTION
The invention is directed to a method for stripping a patterned photoresist layer. The
multi-step process is one comprising providing a substrate, forming a target layer over the
substrate and forming a patterned positive photoresist layer on the target layer. The
patterned photoresist layer acts as a mask for processing of the target layer. Following
processing, one obtains a processed target layer and a processed patterned positive photoresist
layer. The processed patterned positive photoresist is thereafter photo-exposed and stripped
while employing a solvent. Additional limitations are described in the following illustrative
claim.
THE CLAIM
Claim 1 is illustrative of appellants’ invention and is reproduced below.
1. A method for stripping a patterned photoresist layer comprising:
providing a substrate;
forming over the substrate a target layer;
forming upon the target layer a patterned positive photoresist layer;
processing the target layer while employing the patterned positive photoresist layer as a
mask layer to thus form from the target layer a processed target layer and to form from the
patterned positive photoresist layer a processed patterned positive photoresist layer;
2
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