Appeal No. 2002-0730 2
Application No. 09/410,250
THE INVENTION
The invention is directed to an electrolytic solution for electroplating copper in
trenches and vias in dielectric material on semiconductor chips. The electrolytic solution
comprises water, copper in the +1 or +2 oxidation state, anions that form at least one
complex anion with copper, and at least one organic additive which tends to further
suppress the copper deposition rate. In a second embodiment, the invention is further
directed to a process for electroplating copper circuitry in trenches and vias in dielectric
material on semiconductor chips utilizing the electrolytic solution of the first embodiment.
Additional limitations are provided in the following illustrative claims.
THE CLAIMS
Claims 1 and 15 are illustrative of appellants= invention and are reproduced below:
1. An electrolytic solution for electroplating copper circuitry in trenches
and vias in dielectric material on semiconductor chips, comprising:
water as a solvent,
copper in either the +1 or +2 oxidation state or a mixture of the
two states,
anions that form at least one complex ion with said copper so as to
significantly increase the overvoltage for copper electrodeposition such that the
copper deposition rate at a given cathode voltage is suppressed, and
at least one organic additive species which tends to further suppress
the copper deposition rate so as to provide the rate differential needed to provide
bottom-up filling of said trenches and vias,
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