Appeal No. 2002-0730 3
Application No. 09/410,250
wherein said electrolytic solution is used for electroplating copper
circuitry in trenches and vias in dielectric material on semiconductor chips.
15. A process for electroplating copper circuitry in trenches and vias in
dielectric material on semiconductor chips, comprising:
providing a semiconductor chip which includes dielectric material in
which trenches and/or vias have been formed,
placing said chip in contact with an electroplating solution, said
solution comprising:
water as a solvent,
copper in either the +1 or +2 oxidation state or a mixture of
the two states,
anions that form at least one complex ion with said copper so
as to significantly increase the overvoltage for copper electrodeposition such that the
copper deposition rate at a given cathode voltage is suppressed, and
at least one organic additive species which tends to further suppress
the copper deposition rate so as to provide the rate differential needed to provide
bottom-up filling of said trenches and/or vias, and
electrodepositing copper in said trenches and/or vias.
THE REFERENCES OF RECORD
As evidence of anticipation and obviousness the examiner relies upon the following
references:
Lyde 3,674,660 Jul. 4, 1972
Morrissey et al. (Morrissey) 4,683,036 Jul. 28, 1987
Dubin et al. (Dubin) 5,972,192 Oct. 26, 1999
(Filed July 23, 1997)
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