Appeal No. 2002-0897
Application 09/303,020
forming a layer on a top surface of the semiconductor wafer and
within a cavity formed in the wafer such that at least a portion
of the cavity remains open;
polishing a portion of the layer formed above a plane
defined approximately by a top surface of the semiconductor
wafer;
megasonically cleaning the semiconductor wafer including the
open portion of the cavity; and
brush scrubbing the semiconductor wafer to clean the open
portion of the cavity.
THE REFERENCES
Doan et al. (Doan) 5,391,511 Feb. 21, 1995
Kirlin et al. (Kirlin) 5,976,928 Nov. 2, 1999
(filed Nov. 20, 1997)
Roy et al. (Roy) 5,996,594 Dec. 7, 1999
(effective filing date Nov. 30, 1994)
THE REJECTION
Claims 1-20 stand rejected under 35 U.S.C. § 103 as being
unpatentable over Doan taken with Roy and Kirlin.1
OPINION
We affirm the aforementioned rejection.
The appellants state that the claims stand or fall together
(brief, page 3). We therefore limit our discussion to one claim,
1 Rejections of claims 1-10 under 35 U.S.C. § 112, first
paragraph, and claims 1-20 under 35 U.S.C. § 103 over
U.S. 5,779,520 to Hayakawa taken with Doan and Kirlin are
withdrawn in the examiner’s answer (page 2).
2
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