Ex Parte HILLYER et al - Page 4




              Appeal No. 2002-1415                                                                                      
              Application No. 09/141,812                                                                                

              oxygen plasma.1  The examiner turns to Savas at columns 19 and 20, in particular                          
              column 20, lines 14-37, for teaching “a process to remove the resist and residue via an                   
              oxygen plasma wherein ammonia as well as other compounds may be mixed with the                            
              oxygen plasma....”                                                                                        
                     Appellants argue that there is no motivation to select ammonia from the possible                   
              additives listed by Savas.  The examiner’s position is that motivation exists because                     
              Savas specifically states that mixing ammonia with oxygen will increase the removal                       
              rate of the resist.  (Answer at 6.)  The examiner further contends that Savas teaches a                   
              cleaning step “directed to clean a via and strip the photoresist as in Molloy” (id. at 7)                 
              and that the teachings of Savas “show that mixture of ammonia and oxygen to clean [a]                     
              via and strip a photoresist is [sic; was] known in the art” (id. at 8).                                   
                     Savas teaches:                                                                                     
                            [O]ther gases may be used to enhance stripping.  In particular, as is                       
                     known in the art, gases may be added to oxygen in small concentrations to                          
                     attack specific chemical residues that may form on the resist.  During                             
                     etching, the resist may become very hard and dense.  Ion implantation                              
                     may occur and impurities such as boron or arsenic may become                                       
                     embedded in the resist.  Etch processes may also produce a SiO2 residue                            
                     or implant aluminum contaminants in the resist.  As is known in the art,                           
                     these and other side effects from wafer processing can create a resist or                          
                     film that is very resistant to reaction with oxygen atoms alone.  Additives                        

                     1 Molloy indicates oxygen and “amine gases” as possible mixtures (col. 4, ll. 27-31).  An amine is 
              “one of a class of organic compounds which can be considered to be derived from ammonia by                
              replacement of one or more hydrogens by functional groups.”  McGraw-Hill Dictionary of Scientific and     
              Technical Terms Fifth Ed. at 78 (1994).  An amine gas thus may be, but is not necessarily, derived from   
              ammonia.  See, e.g., Kirk-Othmer Encylopedia of Chemical Technology Third Ed., Vol. 2 at 276-77, John     
              Wiley & Sons (1978) (providing examples of manufacturing amine: four examples using ammonia and one       
              using hydrogen cyanide and an olefin).                                                                    
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