Appeal No. 2003-0230
Application No. 09/624,025
forming a first oxide layer overlying said substrate;
depositing a first nitride layer overlying said first oxide
layer;
patterning and etching away a portion of said first nitride
layer and said first oxide layer forming an opening to said
substrate;
anisotropically etching said substrate in the area of said
opening to form a trench;
thermally growing a second oxide layer on the surface of said
trench;
implanting ions through said second oxide layer into said
substrate at the bottom only of said trench thereby forming an
implanted region under said trench;
depositing a second nitride layer overlying said first
nitride layer and covering the surface of said second oxide layer
on the surface of said trench;
anisotropically etching said second nitride layer and said
second oxide layer at the bottom of said trench thereby forming
nitride spacers on sidewalls of said trench and exposing said
implanted region;
depositing a third oxide layer to fill said trench; and
planarizing said third oxide layer completing fabrication of
said integrated circuit isolation region.
The References
In rejecting the claims under 35 U.S.C. § 103(a), the
examiner relies upon the following references:
Arnold 5,783,476 Jul. 21, 1998
Sheng et al. (Sheng) 5,904,540 May 18, 1999
Peidous 5,989,978 Nov. 23, 1999
Wu 6,069,057 May 30, 2000
Gardner et al. (Gardner) 6,093,611 Jul. 25, 2000
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