Appeal No. 2003-1081
Application 08/581,347
Claims 21 and 38 are illustrative:
21. A method of making a semiconductor structure,
comprising:
plasma etching a surface of a substrate; and
transferring heat from said substrate to (i) a seal on a
support surface, and (ii) a gas in a space defined by said
substrate, said seal and said support surface, substantially
uniformly across said substrate, said seal being in contact with
an opposing surface of said substrate.
38. A method of making a semiconductor device, comprising:
making a semiconductor structure by the method of Claim 21;
and
making a semiconductor device comprising the semiconductor
structure.
THE REFERENCES
Horiuchi et al. (Horiuchi) 4,931,135 Jun. 5, 1990
Meyer et al. (Meyer) 5,089,880 Feb. 18, 1992
Cathey, Jr. 5,096,536 Mar. 17, 1992
THE REJECTIONS
The claims stand rejected as follows: claims 21-27, 29, 31-
37, 40 and 41-43 under 35 U.S.C. § 102(b) as anticipated by
Cathey, Jr.; claim 28 under 35 U.S.C. § 103 as obvious over
Cathey, Jr. in view of Meyer; claims 21 and 30 under 35 U.S.C.
§ 103 as obvious over Cathey, Jr. in view of Horiuchi; and
claims 38 and 39 under 35 U.S.C. § 112, second paragraph, as
being incomplete for omitting essential steps.
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