Appeal No. 2003-1269
Application 09/041,913
THE INVENTION
The appellants claim a process for depositing a layer on a
semiconductor substrate in a reaction chamber wherein the
temperature in the reaction chamber is varied during the
deposition. Claims 1 and 7 are illustrative:
1. A process for forming a material layer on a
semiconductor substrate, comprising:
placing the semiconductor substrate into a reaction chamber;
varying temperature within said reaction chamber; and
introducing matter of a type to promote formation of said
material layer into said reaction chamber in proximity to an
exposed surface of the semiconductor substrate while varying the
temperature so as to form said material layer to exhibit at least
one substantially uniform property comprising at least one of
sheet resistivity, reflectivity, transmissivity, absorptivity,
etch characteristics, dopant distribution, and dielectric
constant.
7. A process for forming a material layer on a
semiconductor substrate, comprising:
placing the semiconductor substrate into a reaction chamber;
varying temperature within said reaction chamber by
increasing or decreasing the temperature;
cycling the temperature within said reaction chamber
following said increasing or decreasing, said cycling including
decreasing and re-increasing or increasing and re-decreasing the
temperature within said reaction chamber at least once; and
introducing matter of a type to promote formation of said
material layer into said reaction chamber in proximity to an
exposed surface of the semiconductor substrate while varying or
cycling the temperature.
2
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