Appeal No. 2003-1269
Application 09/041,913
limit our discussion to claims 1 and 10. We address the claims
other than claims 1 and 10 to the extent justified by the
appellants’ arguments. See In re Ochiai, 71 F.3d 1565, 1566 n.2,
37 USPQ2d 1127, 1129 n.2 (Fed. Cir. 1995); 37 CFR
§ 1.192(c)(7)(1997).
Rejection over Roy in view of Parker
Claims 7 and 10
Roy discloses a process for controlling warpage of a silicon
wafer by using, to grow polysilicon, a multilayering technique
which periodically oscillates growth parameters during
polysilicon deposition (col. 2, lines 63-66; col. 4, lines 19-
22). The process provides “both accommodation and reduction of
the growth stress generated during polysilicon deposition”
(col. 3, lines 6-8). “Stress accommodation is achieved by
substructural layering to create pseudo interfaces in the support
structure by deliberate, periodic oscillations in a selected
growth parameter during polysilicon deposition. Stress reduction
is achieved by utilizing a substantial part of the growth stress
to initiate strain-induced recrystallization in the nucleation
layer which is caused by lattice instabilities and strain fields
4
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