Appeal No. 2003-1269
Application 09/041,913
set up during multilayering” (col. 3, lines 8-16). The growth
parameters which may be oscillated during polysilicon deposition
include temperature (col. 3, lines 3-4).1
The appellants argue that Roy does not disclose oscillating
the growth parameters while matter is introduced therein (brief,
page 11). This argument is not correct because Roy discloses
“deliberate periodic oscillations in growth parameters during
polysilicon deposition” (col. 4, lines 21-22) and discloses
ramping the temperature up and down during the oscillatory growth
period (col. 8, lines 15-22).
The appellants argue that Roy is limited to changing the
temperature within a reaction chamber between the formation of
different polysilicon layers, with each polysilicon layer being
formed at a constant temperature (brief, page 12). This argument
is not persuasive because Roy discloses ramping the temperature
up and down during polysilicon layer formation (col. 8, lines 15-
22).
1
1 It is undisputed that Roy’s process takes place in a
reaction chamber.
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