Ex Parte RICHARDS, JR. et al - Page 1




                  The opinion in support of the decision being entered                
                       today was not written for publication and                      
                         is not binding precedent of the Board.                       
                                                            Paper No. 27              

                      UNITED STATES PATENT AND TRADEMARK OFFICE                       
                                    _____________                                     
                         BEFORE THE BOARD OF PATENT APPEALS                           
                                  AND INTERFERENCES                                   
                                    _____________                                     
               Ex parte WILLIAM R. RICHARDS, JR. and MICHAEL W. DENNEN                
                                   _____________                                      
                                Appeal No. 2003-1973                                  
                             Application No. 09/192,952                               
                                   ______________                                     
                                      ON BRIEF                                        
                                   _______________                                    

          Before KIMLIN, PAWLIKOWSKI and MOORE, Administrative Patent                 
          Judges.                                                                     
          KIMLIN, Administrative Patent Judge.                                        

                                 DECISION ON APPEAL                                   
               This is an appeal from the final rejection of claims 1-19              
          and 21-23.                                                                  
               Claim 1 is illustrative:                                               
               1. A Fermi-threshold field effect transistor (Fermi-                   
               FET) comprising:                                                       
                    spaced apart source and drain regions in an                       
               integrated circuit substrate;                                          











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