Appeal No. 2003-1973
Application No. 09/192,952
which can allow a combination increased breakdown voltage
immunity and increased transconductance” (page 6 of principal
brief, second paragraph). This argument, however, is directed to
the novelty of using an offset drain region in a Fermi-FET
transistor but not to the issue at hand, i.e., its obviousness.
As for the provision of increased breakdown voltage immunity and
increased transconductance, it is not necessary for a finding of
obviousness that the prior art recognize all of the advantages of
a claimed invention. It is sufficient that there would have been
some motivation for one of ordinary skill in the art to make the
combination. In the instant case, the motivation arises from a
reasonable expectation that offsetting the drain in Dennen’s FET
would prevent avalanche breakdown.
Appellants also maintain that “[t]he unexpected
characteristic of a simultaneous improvement in breakdown voltage
immunity and an increase in transconductance, provides evidence
of nonobviousness of offset drain Fermi-Fets according to
embodiments of the present invention.” (page 7 of principal
brief, last paragraph). Appellants present a figure at page 8 of
the principal brief “which is a reproduction of Figure 26 of the
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