Appeal No. 2003-1298
Application No. 09/369,579
barrier between the opposite sides of said
second isolation trench that separates said
field oxide region from said second active
region, thus preventing the contact between
said second active region and said field oxide
region and preventing the encroachment of
material from said field oxide region into said
second active region.
34. An isolation structure including a semiconductor
substrate having a top surface, the isolation structure
comprising:
a pair of dielectric structures each of which
contacts a respective active region in
the semiconductor substrate, comprises oxide, and
rises lower above the top surface of the semiconductor
substrate than a substantially oval field oxide region
extending into the semiconductor substrate, wherein
the field oxide region has opposite sides each of
which makes contact with the deposited oxide of a
respective one of the dielectric structures, wherein
each one of said pair of dielectric structures
constitutes a structural barrier that separates said
respective active region from said field oxide region,
thus preventing the encroachment of material from said
field oxide region into said respective active region;
and
nitride layers upon respective oxide layers,
each said oxide layer contacting one of said
dielectric structures and one of the active regions,
and wherein each one of said pair of dielectric
structures constitutes a structural barrier that
separates said substantially oval field oxide region
from each of said nitride layers.
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