Appeal No. 2003-1298
Application No. 09/369,579
Figure 5B of Vasquez shows dielectric structures 24
between field oxide region 44 and nitride layer 20 and
between field oxide region 44 and active regions of
substrate 10.
Appellants do not explain why there could not be
active regions located in substrate 10, below layer 20. We
therefore agree with the examiner that dielectric
structures 24 are between field oxide region 44 and active
regions of substrate 10.
However, with respect to whether dielectric structures
24 are between oxide 44 and nitride layer 20, we find that
Vasquez teaches that portions of layer 30 (shown in Figure
3) are removed, as shown in Figure 4. Then layer 42 is
deposited thereon, as shown in Figure 4. Layer 42 is
oxidized to form isolation region 44, shown in Figure 5A.
See also column 5, lines 48-66 of Vasquez. Hence, no part
of layer 30 (which forms vertical wall surfaces 24) is
between oxide 44 and nitride layer 20. Hence, we agree
with appellants that because plug 34 is already formed
prior to formation of isolation region 44, dielectric
structures 24 do not separate nitride layer 20 from oxide
region 44.
In view of the above, we reverse the rejection of
claim 34.
IV. Conclusion
We reverse the rejection of claim 34, but affirm every
other rejection.
10
Page: Previous 1 2 3 4 5 6 7 8 9 10 11 12 Next
Last modified: November 3, 2007