Appeal No. 2003-1852
Application No. 09/415,402
48. A SiC crystal growth system for high
temperature SiC crystal growth, said system comprising
a container for receiving a silicon carbide seed
crystal and a source of silicon and a source of
carbon, wherein said container comprises;
a graphite core from which a coating of a
secondary material has been removed;
said secondary material being characterized by a
melting point above the sublimation temperature of
SiC, chemical inertness with respect to silicon and
hydrogen at the sublimation temperature, and a
coefficient of thermal expansion sufficiently similar
to said graphite core to prevent cracking between said
graphite core and said coating during heating and
cooling of said container to and from the sublimation
temperature of SiC.
The examiner relies on the following prior art references
as evidence of unpatentability:
Sugiyama et al. 5,964,944 Oct. 12, 1999
(Sugiyama) (filed Mar. 21, 1997)
Maeda et al. 0 554 047 A1 Aug. 04, 1993
(Maeda)(published
EP application)
Balakrishna et al. WO 99/29934 Jun. 17, 1999
(Balakrishna)(published
PCT application)
Claims 1, 4 through 6, 8 through 10, 14 through 16, 18
through 24, 34 through 36, 38, 40 through 42, and 48 through 50
on appeal stand rejected under 35 U.S.C. § 103(a) as
unpatentable over Maeda in view of Balakrishna and Sugiyama.
(Examiner’s answer mailed Mar. 11, 2002, paper 25, pages 3-5.)
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